There were 29 females and 28 males. Mean age was 58 months (range of 12-194 months). Abnormal MRI with varying degrees of white matter changes was noted in 10 (18%) children. Neurological assessments did not reveal any serious central nervous system diseases. Two of the 10 patients demonstrated significant delays and difficulties with postoperative CI performance.\n\nConclusions: Cerebral
white matter abnormalities are not uncommon incidental findings in preoperative MRI scans in pediatric CI AG 14699 candidates. These changes may reflect remote or active pathology which may require neurological assessment. The significance of these findings is still uncertain and should be better clarified as we study more patients. (C) 2010 Elsevier Ireland Ltd. All rights reserved.”
“The adsorption and subsequent dissociative reaction of methanol on the bald Mo-edge, 50% Mo-edge, and 50% S-edge of MoSx clusters were investigated by using density functional theory (DFT). The calculation results showed that the adsorption of methanol molecule through its oxygen atom prefers
the corner sites to the edge sites of MoSx surfaces. The pathways of methanol dissociation via C-H, C-O and O-H bond scissions are considered and O-H bond scission is found to be the most favorable pathway on the MoS2 surface: the activation barrier is 0.45 eV on the bald Mo-edge and about 1.0 eV on the 50% Mo-edge and 50% S-edge. Among the intermediates formed from methanol dissociation, CH3O is the dominant surface species after the MoS2 BMN 673 supplier Selonsertib surface is exposed to methanol. (C) 2011 Elsevier B.V. All rights reserved.”
“Photoresists used in advanced ArF-excimer laser lithography are not tolerant enough for plasma
etching processes. Degradation of photoresists during etching processes might cause not only low selectivity, but also line edge roughness (LER) on the sidewalls of etched patterns. For a highly accurate processing, it is necessary to understand the mechanisms of etching photoresists and to construct a new plasma chemistry that realizes a nano scale precise pattern definition. In this study, the modified layers formed on the surface of a photoresist by the bombardment of fluorocarbon ions of CF+, CF2+, and CF3+, and argon (Ar) ions were analyzed by X-ray photoelectron spectroscopy (XPS). The etching yield of the modified steady-state surface was almost dependent on the mass of incident ion species. The surface composition was modified with increasing dosage of each ion species, and reached a specific steady state that was dependent on the ion species. The bombardment of F-rich ion species such as CF2+ and CF3+ resulted in the formation of not only fluorocarbon layers, but also graphite like structures on the surface. On the basis of these results, the surface reaction for the ion-beam-induced modification was discussed.