This means that all carriers generated in QW1 are now escaping and contributing to the PC hence the conductance being zero. The negative charge and electron population in QW1 has dropped compared to their values at V app = 0.7 V, as the higher electric field across the well decreases the electron escape time. At this bias, a significant electric field has developed across QW2. As was the case for QW1, any electric field across the well will cause the loosely confined holes to escape. This results

in a high electron concentration hence a negative charge to develop in QW2. The oscillation that had led to the electrons escaping QW1 will now repeat for QW2 and eventually for every other QW in the device as the reverse bias

is increased. This effect can be seen in the video included in the Additional file 1, which shows the evolution of the band energy diagram, selleck chemical the recombination rate and the charge and carrier distribution as a function of applied bias. Conclusions In this paper, we investigated and modelled the PC oscillations observed in the low-temperature I-V characteristics of illuminated GaInNAs/GaAs MQW pin diodes. The number of the steps reflects the number of the QWs in the device. Modelling the devices using a semiconductor device simulation package shows that due to the low VB offset in dilute nitride selleck monoclonal humanized antibody inhibitor material, the holes can escape from the wells much quicker than electrons Arachidonate 15-lipoxygenase resulting in the accumulation of negative charge in each well. This charge results in the electric field being applied one well at a time, and each step corresponds to the escape probability becoming low enough for photogenerated electrons to escape from a quantum well. Acknowledgements We would like to thank the Optoelectronics Research Centre at Tampere and the National Center for III-V technologies at Sheffield University for providing the GaInNAs samples. This work was partly supported by Scientific Research Projects Coordination Unit of Istanbul University. Project number: IRP 9571.COST action MP0805 entitled ‘Novel Gain Materials and Devices Based on III-V-N Compounds’ is also gratefully

acknowledged. Electronic supplementary material Additional file 1: The video shows the modelling results achieved using Simwindows32 for sample AsN3134. Four graphs are constantly updated as the applied voltage is swept from 1 to −5 V. The x-axis represents the distance from the top of the device, measured in μm. Precisely: top left, evolution of the band diagram, measured in eV, the green and red lines are the hole and electron Fermi levels, respectively; top right, total recombination rate, this is the recombination rate minus the generation rate in the units of cm−3 s−1; bottom left, total electron (blue) and hole (red) concentrations in the units of cm-3; bottom right, charge distribution in the units of C/cm3. (MP4 13 MB) References 1.